Gallium Nitride (GaN), a third-generation semiconductor material, has emerged as a game-changer in the counter-drone industry. Compared to traditional silicon (Si) or silicon carbide (SiC)
In 2025, governments worldwide have intensified regulations on “low-slow-small” (LSS) aircraft (drones weighing ≤25kg, flying below 150m, and speed ≤100km/h) to address growing security risks.
Portable counter-drone devices have evolved dramatically in the past 5 years: once limited to military special operations, they now serve as frontline tools for civilian
Airports are among the most high-stakes targets for unauthorized drone incursions—even a small consumer drone can disrupt operations, delay flights, and pose catastrophic safety risks.
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